ZnON MIS Thin-Film Diodes
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Mohd Daut, MH https://orcid.org/0000-0002-4023-6267
Wager, JF
Nathan, A https://orcid.org/0000-0002-2070-8853
Abstract
ZnON metal-insulator-semiconductor (MIS) diodes are fabricated and characterized. Although these devices display excellent rectification, their temperature-dependent current-voltage (I-V) characteristics are not explicable using analysis methodologies currently available in the literature. Therefore, we employ a simple curve fitting strategy in order to elucidate measured trends. It is found that the forward current trends are describable using three parameters, i.e., reverse saturation current, ideality factor, and series resistance, whereas the reverse current temperature dependence only requires one parameter, i.e., shunt resistance. All four of these model parameters are found to be strongly temperature dependent.
Description
Keywords
40 Engineering, 4016 Materials Engineering
Journal Title
IEEE Journal of the Electron Devices Society
Conference Name
Journal ISSN
2168-6734
2168-6734
2168-6734
Volume Title
7
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/M013650/1)