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ZnON MIS Thin-Film Diodes

Accepted version
Peer-reviewed

Type

Article

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Authors

Abstract

ZnON metal-insulator-semiconductor (MIS) diodes are fabricated and characterized. Although these devices display excellent rectification, their temperature-dependent current-voltage (I-V) characteristics are not explicable using analysis methodologies currently available in the literature. Therefore, we employ a simple curve fitting strategy in order to elucidate measured trends. It is found that the forward current trends are describable using three parameters, i.e., reverse saturation current, ideality factor, and series resistance, whereas the reverse current temperature dependence only requires one parameter, i.e., shunt resistance. All four of these model parameters are found to be strongly temperature dependent.

Description

Keywords

40 Engineering, 4016 Materials Engineering

Journal Title

IEEE Journal of the Electron Devices Society

Conference Name

Journal ISSN

2168-6734
2168-6734

Volume Title

7

Publisher

Institute of Electrical and Electronics Engineers (IEEE)
Sponsorship
Engineering and Physical Sciences Research Council (EP/M013650/1)