Spectral diffusion time scales in InGaN/GaN quantum dots
Applied Physics Letters
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Zhu, T., Gao, K., Springbett, H., Oliver, R., Arakawa, Y., & Holmes, M. (2019). Spectral diffusion time scales in InGaN/GaN quantum dots. Applied Physics Letters, 114 (112109) https://doi.org/10.1063/1.5088205
A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both time-varying emission spectra and single photon emission intensity autocorrelation times. Excitation dependent phenomena are investigated via the optical excitation of carriers into the GaN barrier material and also directly into the InGaN. Excitation into the InGaN reveals that the fastest environmental fluctuations occur on timescales as long as a few hundreds of nanoseconds: an order of magnitude longer than previously measured in GaN QDs. Such long time scales may in future allow for the generation of indistinguishable photons in spite of the fact that the experimentally measured linewidths are broad.
This work was supported by a JSPS KAKENHI Grant-in-Aid for Specially Promoted Research (No. 15H05700), the KAKENHI project (No. 17K14655), the JSPS Summer Program, the Takuetsu program of the Ministry of Education, Culture, Sports, Science and Technology, Japan, and the UK Engineering and Physical Sciences Research Council Grant (No. EP/M011682/1).
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
External DOI: https://doi.org/10.1063/1.5088205
This record's URL: https://www.repository.cam.ac.uk/handle/1810/290878