Low Contact Barrier in 2H/1T' MoTe<sub>2</sub> In-Plane Heterostructure Synthesized by Chemical Vapor Deposition.
Tiwary, Chandra Sekhar
Idrobo, Juan Carlos
Yakobson, Boris I
Ajayan, Pulickel M
ACS applied materials & interfaces
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Zhang, X., Jin, Z., Wang, L., Hachtel, J. A., Villarreal, E., Wang, Z., Ha, T., et al. (2019). Low Contact Barrier in 2H/1T' MoTe<sub>2</sub> In-Plane Heterostructure Synthesized by Chemical Vapor Deposition.. ACS applied materials & interfaces, 11 (13), 12777-12785. https://doi.org/10.1021/acsami.9b00306
Metal-semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T' MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal-semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.
External DOI: https://doi.org/10.1021/acsami.9b00306
This record's URL: https://www.repository.cam.ac.uk/handle/1810/291563
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