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Investigation of the Dual Implant Reverse-Conducting SuperJunction Insulated-Gate Bipolar Transistor

Accepted version
Peer-reviewed

Type

Article

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Abstract

This letter presents the Dual Implant SuperJunction (SJ) trench Reverse-Conducting (RC) Insulated Gate Bipolar Transistor (IGBT) concept with two implanted SJ pillars in the drift region; one from the cathode side and another from the anode side. The proposed device is compatible with current manufacturing processes and enables a full SJ structure to be achieved in a 1.2kV device as alignment between the pillars is not required. Extensive Technology Computer Aided Design (TCAD) simulations have been performed and demonstrated that utilising this dual implantation technique can result in a 77% reduction in turn-off losses for a full SJ structure, compared to a conventional RC-IGBT. The results show that any snapback in the on-state waveform significantly increases the turn-off losses and only a deep SJ device (pillar gap < 10μm) warrants the additional processing expense.

Description

Keywords

Insulated gate bipolar transistor (IGBT), reverse conducting insulated gate bipolar transistor (RC-IGBT), superjunction (SJ), body diode, anti-parallel diode, power devices, power electronics

Journal Title

IEEE Electron Device Letters

Conference Name

Journal ISSN

0741-3106
1558-0563

Volume Title

40

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Rights

All rights reserved
Sponsorship
EPSRC (1724376)
Royal Society (DH160139)
Technology Strategy Board (102878)