Carbon-Based Resistive Memories

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Authors
Koelmans, WW
Bachmann, T
Zipoli, F
Ott, AK
Dou, C
Ferrari, AC
Cojocaru-Miredin, O
Publication Date
2016-06-23
Journal Title
2016 IEEE 8th International Memory Workshop, IMW 2016
Conference Name
2016 IEEE 8th International Memory Workshop
ISSN
2330-7978
ISBN
9781467388313
Publisher
IEEE
Language
English
Type
Conference Object
This Version
AM
Metadata
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Citation
Koelmans, W., Bachmann, T., Zipoli, F., Ott, A., Dou, C., Ferrari, A., Cojocaru-Miredin, O., et al. (2016). Carbon-Based Resistive Memories. 2016 IEEE 8th International Memory Workshop, IMW 2016 https://doi.org/10.1109/IMW.2016.7493569
Abstract
Carbon-based nonvolatile resistive memories are an emerging technology. Switching endurance remains a challenge in carbon memories based on tetrahedral amorphous carbon (ta-C). One way to counter this is by oxygenation to increase the repeatability of reversible switching. Here, we overview the current status of carbon memories. We then present a comparative study of oxygen-free and oxygenated carbon-based memory devices, combining experiments and molecular dynamics (MD) simulations.
Keywords
Nonvolatile memory, oxygenated carbon, RRAM, tetrahedral amorphous carbon, diamond-like carbon, storage class memory
Sponsorship
European Commission (309980)
Identifiers
External DOI: https://doi.org/10.1109/IMW.2016.7493569
This record's URL: https://www.repository.cam.ac.uk/handle/1810/295211
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http://www.rioxx.net/licenses/all-rights-reserved
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