Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Lee, LY; Frentrup, M; Vacek, P; Massabuau, FCP; Kappers, MJ; Wallis, DJ; Oliver, RA

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Accepted version

Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/295921

Repository DOI

https://doi.org/10.17863/CAM.42967

Files

Accepted version (4.53 MB)

Type

Article

Authors

Lee, LY

https://orcid.org/0000-0003-1008-1652

Frentrup, M

Vacek, P

Massabuau, FCP

Kappers, MJ

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Keywords

Atomic force microscopy, Nucleation, X-ray diffraction, Metalorganic vapor phase epitaxy, Nitrides, Semiconducting gallium compounds

Journal Title

Journal of Crystal Growth

Journal ISSN

0022-0248
1873-5002

Volume Title

524

Publisher

Elsevier BV

Publisher DOI

https://doi.org/10.1016/j.jcrysgro.2019.125167

Rights

Attribution-NonCommercial-NoDerivatives 4.0 International

Sponsorship

Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/P03036X/1)
Engineering and Physical Sciences Research Council (EP/R01146X/1)
EPSRC (via Cardiff University) (513956)
Engineering and Physical Sciences Research Council (EP/P024947/1)
Engineering and Physical Sciences Research Council (EP/S019367/1)
Engineering and Physical Sciences Research Council (EP/R00661X/1)

Collections

Cambridge University Research Outputs