Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

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Authors
  Lee, Lok Yi
Frentrup, Martin
Vacek, P
  Massabuau, Fabien
Kappers, Menno
  Wallis, David
Oliver, Rachel
Publication Date
2019-10-15
Journal Title
Journal of Crystal Growth
ISSN
0022-0248
Volume
524
Type
Article
This Version
AM
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Citation
Lee, L. Y., Frentrup, M., Vacek, P., Massabuau, F., Kappers, M., Wallis, D., & Oliver, R. (2019). Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth, 524 https://doi.org/10.1016/j.jcrysgro.2019.125167
Sponsorship
EPSRC (EP/M010589/1)
EPSRC (EP/P03036X/1)
EPSRC (EP/R01146X/1)
EPSRC (via Cardiff University) (513956)
EPSRC (EP/P024947/1)
Identifiers
External DOI: https://doi.org/10.1016/j.jcrysgro.2019.125167
This record's URL: https://www.repository.cam.ac.uk/handle/1810/295921

Rights
Attribution-NonCommercial-NoDerivatives 4.0 International
Licence URL: https://creativecommons.org/licenses/by-nc-nd/4.0/

Attribution-NonCommercial-NoDerivatives 4.0 International
Except where otherwise noted, this item's licence is described as Attribution-NonCommercial-NoDerivatives 4.0 International