Effect of hole doping on the London penetration depth in Bi2.15Sr1.85CaCu2O8+δ and Bi2.1Sr1.9Ca0.85Y0.15Cu2O8+δ

Anukool, W; Barakat, S; Panagopoulos, C; Cooper, John

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Authors

Anukool, W

Barakat, S

Panagopoulos, C

Cooper, John

Journal Title

Physical Review B: Condensed Matter and Materials Physics

ISSN

1098-0121

Publisher

American Physical Society

Volume

Issue

Number

024516

Type

Article

This Version

VoR

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Citation

Anukool, W., Barakat, S., Panagopoulos, C., & Cooper, J. (2009). Effect of hole doping on the London penetration depth in Bi2.15Sr1.85CaCu2O8+δ and Bi2.1Sr1.9Ca0.85Y0.15Cu2O8+δ. Physical Review B: Condensed Matter and Materials Physics, 80 (2. 024516)https://doi.org/10.1103/PhysRevB.80.024516

Abstract

We report measurements of ac susceptibility and hence the in-plane London penetration depth on the same samples of Bi2.15Sr1.85CaCu2O8+δ and Bi2.1Sr1.9Ca0.85Y0.15Cu2O8+δ for many values of the hole concentration (p). These support the scenario in which the pseudogap weakens the superconducting response only for p≲0.19.

Keywords

bismuth compounds, calcium compounds, doping profiles, high-temperature superconductors, magnetic susceptibility, penetration depth (superconductivity), strontium compounds, superconducting energy gap, yttrium compounds, HIGH-T-C, THERMOELECTRIC-POWER, SINGLE-CRYSTALS, SUPERCONDUCTORS, BI2SR2CACU2O8+DELTA, RESISTIVITY, INPLANE, DENSITY

Sponsorship

We acknowledge funding from the EPSRC (U.K.), for the experimental facilities in Cambridge, and further financial support from The Royal Society, EURYI, and MEXT-CT-2006-039047. W.A. was supported by the Development and Promotion of Science and Technology Talents Project (D.P.S.T.), Thailand.

Identifiers

External DOI: https://doi.org/10.1103/PhysRevB.80.024516

This record's URL: https://www.repository.cam.ac.uk/handle/1810/296742

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