Structural changes during the switching transition of chalcogenide selector devices
Applied Physics Letters
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Guo, Y., Li, H., Zhang, W., & Robertson, J. (2019). Structural changes during the switching transition of chalcogenide selector devices. Applied Physics Letters, 115 (16)https://doi.org/10.1063/1.5125215
Ovonic threshold switches are a favored choice for chalcogenide-based amorphous (a-) GeSex selector devices used in cross-point arrays of nonvolatile memories. Previous models of their nonlinear high-field conduction proposed a largely electronic-only switching mechanism, within a fixed density of electronic states. Here, we use a density functional molecular-dynamics supercell calculation to show that the high-current excited state configuration of a-GeSex has structural changes such as additional Ge-Ge bonds and overcoordinated Ge sites, giving lower effective mass, more delocalized conduction states, and a lower ON resistance.
We acknowledge the funding from the EC H2020 project Phase change switch.
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (737109)
External DOI: https://doi.org/10.1063/1.5125215
This record's URL: https://www.repository.cam.ac.uk/handle/1810/298780
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