Structural changes during the switching transition of chalcogenide selector devices
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Peer-reviewed
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Change log
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Abstract
jats:pOvonic threshold switches are a favored choice for chalcogenide-based amorphous (a-) GeSex selector devices used in cross-point arrays of nonvolatile memories. Previous models of their nonlinear high-field conduction proposed a largely electronic-only switching mechanism, within a fixed density of electronic states. Here, we use a density functional molecular-dynamics supercell calculation to show that the high-current excited state configuration of a-GeSex has structural changes such as additional Ge-Ge bonds and overcoordinated Ge sites, giving lower effective mass, more delocalized conduction states, and a lower ON resistance.</jats:p>
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Keywords
40 Engineering, 51 Physical Sciences
Journal Title
Applied Physics Letters
Conference Name
Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
115
Publisher
AIP Publishing
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All rights reserved
Sponsorship
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (737109)
We acknowledge the funding from the EC H2020 project Phase change switch.