Enhanced performance of InAsP nanowires with ultra-thin passivation layer
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Publication Date
2019-09-01Journal Title
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
ISSN
2162-2027
ISBN
9781538682852
Volume
2019-September
Type
Conference Object
This Version
AM
Metadata
Show full item recordCitation
Adeyemo, S., Kar, S., Zhang, Y., Liu, H., & Joyce, H. (2019). Enhanced performance of InAsP nanowires with ultra-thin passivation layer. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2019-September https://doi.org/10.1109/IRMMW-THz.2019.8874492
Abstract
Surface passivation with a higher band gap shell has been shown to successfully reduce the density of surface states at the surface of nanowires. The effect of ultra-thin InP passivation layers of thicknesses ∼ 3 -5 nm coated on InAsP nanowires is investigated and compared to bare InAsP nanowires. The ultra-thin passivation exhibited an improvement in carrier lifetime and mobility by approximately a factor of 3. Surface recombination velocity was decreased by at least a factor of 3.
Sponsorship
Royal Commission for the Exhibition of 1851 (RF/2013/451)
European Commission Horizon 2020 (H2020) ERC (716471)
Identifiers
External DOI: https://doi.org/10.1109/IRMMW-THz.2019.8874492
This record's URL: https://www.repository.cam.ac.uk/handle/1810/299521
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