Enhanced performance of InAsP nanowires with ultra-thin passivation layer

Adeyemo, SO; Kar, Srabani; Zhang, Y; Liu, H; Joyce, Hannah

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Authors

Adeyemo, SO

Kar, Srabani

Zhang, Y

Liu, H

Joyce, Hannah

Publication Date

2019-09-01

Journal Title

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

ISSN

2162-2027

ISBN

9781538682852

Volume

2019-September

Type

Conference Object

This Version

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Citation

Adeyemo, S., Kar, S., Zhang, Y., Liu, H., & Joyce, H. (2019). Enhanced performance of InAsP nanowires with ultra-thin passivation layer. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2019-September https://doi.org/10.1109/IRMMW-THz.2019.8874492

Abstract

Surface passivation with a higher band gap shell has been shown to successfully reduce the density of surface states at the surface of nanowires. The effect of ultra-thin InP passivation layers of thicknesses ∼ 3 -5 nm coated on InAsP nanowires is investigated and compared to bare InAsP nanowires. The ultra-thin passivation exhibited an improvement in carrier lifetime and mobility by approximately a factor of 3. Surface recombination velocity was decreased by at least a factor of 3.

Sponsorship

Royal Commission for the Exhibition of 1851 (RF/2013/451)

European Commission Horizon 2020 (H2020) ERC (716471)

Identifiers

External DOI: https://doi.org/10.1109/IRMMW-THz.2019.8874492

This record's URL: https://www.repository.cam.ac.uk/handle/1810/299521