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dc.contributor.authorDi Nuzzo, Den
dc.contributor.authorMizuta, Ryoen
dc.contributor.authorNakanishi, Kenichien
dc.contributor.authorMartin, MBen
dc.contributor.authorAria, AIen
dc.contributor.authorWeatherup, Ren
dc.contributor.authorFriend, Richarden
dc.contributor.authorHofmann, Stephanen
dc.contributor.authorAlexander-Webber, Jack Allenen
dc.date.accessioned2020-03-31T23:30:20Z
dc.date.available2020-03-31T23:30:20Z
dc.date.issued2020-04-20en
dc.identifier.issn0003-6951
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/303953
dc.description.abstractEfficient injection of charge from metal electrodes into semiconductors is of paramount importance to obtain high performance optoelectronic devices. The quality of the interface between the electrode and the semiconductor must therefore be carefully controlled. The case of organic semiconductors presents specific problems: ambient deposition techniques, such as solution processing, restrict the choice of electrodes to those not prone to oxidation, limiting potential application. Additionally, damage to the semiconductor in sputter coating or high temperature thermal evaporation poses an obstacle to the use of many device-relevant metals as top electrodes in vertical metal-semiconductor-metal structures, making it preferable to use them as bottom electrodes. Here we propose a possible solution to these problems by implementing graphene-passivated nickel as an air stable bottom electrode in vertical devices comprising organic semiconductors. We use these passivated layers as hole-injecting bottom electrodes and we show that efficient charge injection can be achieved into standard organic semiconducting polymers, owing to an oxide free nickel/graphene/polymer interface. Crucially, we fabricate our electrodes with low roughness, which in turn allows us to produce large area devices (of the order of millimetre squares) without electrical shorts occurring. Our results make these graphene-passivated ferromagnetic electrodes a promising approach for large area organic optoelectronic and spintronic devices.
dc.description.sponsorshipWe acknowledge funding from EPSRC (EP/P005152/1, EP/M005143/1). R.M. and K.N. acknowledges funding from the EPSRC Cambridge NanoDTC (Grant No. EP/G037221/1). J.A.-W. acknowledges the support of his Research Fellowship from the Royal Commission for the Exhibition of 1851, and Royal Society Dorothy Hodgkin Research Fellowship. R. S. W. acknowledges support from a CAMS-UK fellowship.
dc.publisherAmerican Institute of Physics
dc.rightsAll rights reserved
dc.titleGraphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devicesen
dc.typeArticle
prism.issueIdentifier16en
prism.publicationDate2020en
prism.publicationNameApplied Physics Lettersen
prism.volume116en
dc.identifier.doi10.17863/CAM.51037
dcterms.dateAccepted2020-03-29en
rioxxterms.versionofrecord10.1063/5.0002222en
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2020-04-20en
dc.contributor.orcidDi Nuzzo, D [0000-0002-4462-9068]
dc.contributor.orcidMizuta, Ryo [0000-0002-4896-4998]
dc.contributor.orcidNakanishi, Kenichi [0000-0003-3816-1806]
dc.contributor.orcidAria, AI [0000-0002-6305-3906]
dc.contributor.orcidWeatherup, R [0000-0002-3993-9045]
dc.contributor.orcidFriend, Richard [0000-0001-6565-6308]
dc.contributor.orcidHofmann, Stephan [0000-0001-6375-1459]
dc.contributor.orcidAlexander-Webber, Jack [0000-0002-9374-7423]
dc.identifier.eissn1077-3118
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idRoyal Commission for the Exhibition of 1851 (RF474/2016)
pubs.funder-project-idRoyal Society (DHF\F1\191163)
pubs.funder-project-idEPSRC (EP/P005152/1)
pubs.funder-project-idEPSRC (EP/G037221/1)
pubs.funder-project-idEPSRC (EP/M005143/1)
pubs.funder-project-idEPSRC (1819434)
cam.orpheus.successMon Apr 27 07:59:10 BST 2020 - Embargo updated*
cam.orpheus.counter2*
rioxxterms.freetoread.startdate2020-04-20


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