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dc.contributor.authorSingh, Neeteshen
dc.contributor.authorRaval, Mananen
dc.contributor.authorRuocco, Alfonsoen
dc.contributor.authorWatts, Michael Ren
dc.date.accessioned2020-04-14T23:30:40Z
dc.date.available2020-04-14T23:30:40Z
dc.date.issued2020-01en
dc.identifier.issn2047-7538
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/304328
dc.format.mediumElectronic-eCollectionen
dc.languageengen
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.titleBroadband 200-nm second-harmonic generation in silicon in the telecom band.en
dc.typeArticle
prism.publicationDate2020en
prism.publicationNameLight, science & applicationsen
prism.startingPage17
prism.volume9en
dc.identifier.doi10.17863/CAM.51410
dcterms.dateAccepted2020-01-23en
rioxxterms.versionofrecord10.1038/s41377-020-0254-7en
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2020-01en
dc.contributor.orcidRuocco, Alfonso [0000-0001-7112-2003]
dc.identifier.eissn2047-7538
rioxxterms.typeJournal Article/Reviewen


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International