## Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic on-State Resistance

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##### Publication Date

2020-06-01##### Journal Title

IEEE Transactions on Transportation Electrification

##### ISSN

2332-7782

##### Publisher

IEEE

##### Volume

6

##### Issue

2

##### Pages

540-553

##### Type

Article

##### This Version

AM

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Show full item record##### Citation

Hou, R., Shen, Y., Zhao, H., Hu, H., Lu, J., & Long, T. (2020). Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic on-State Resistance. IEEE Transactions on Transportation Electrification, 6 (2), 540-553. https://doi.org/10.1109/TTE.2020.2989036

##### Abstract

Gallium nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can achieve high frequency and high efficiency due to its excellent switching performance compared with conventional Si transistors. Nevertheless, GaN HEMTs exhibit a more pronounced dynamic ON-state resistance R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} than silicon transistors. The variation of R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} is caused by both the static R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} due to junction temperature rise and the dynamic R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} due to the electron trapping. Without a careful decoupling analysis, it is difficult to calculate and model the dynamic R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} portion. This article introduces a comprehensive approach of dynamic R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} evaluation comprising four techniques: 1) a clamping circuit for both the hard-switching (HS) device and synchronous rectification (SR) device; 2) a junction temperature monitoring technique; 3) control of both the pulse test and soak time; and 4) continuous operation of device under test. Based on the dynamic R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} test results, a new model of the R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} variation is developed where two coefficients k-{T{j}} and k-{mathrm {dR}} are defined to model the contribution of the heating effect and the impact of the trapping effect, respectively. The R-{mathrm {DS}(mathrm{scriptscriptstyle ON})} model is validated by the comparison between the calculated and measured junction temperatures of a 650-V/30-A GaN-based half-bridge. Furthermore, a detailed loss breakdown analysis is conducted for the GaN-based HS half-bridge. The results show that the switching losses, E-{mathrm{scriptscriptstyle ON}} and E-{mathrm{scriptscriptstyle OFF}} , are the dominant loss factors with high switching frequency. At last, the possible efficiency improvements are also discussed in detail.

##### Identifiers

External DOI: https://doi.org/10.1109/TTE.2020.2989036

This record's URL: https://www.repository.cam.ac.uk/handle/1810/304682

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