Direct evidence of polar ferroelastic domain boundaries in semiconductor BiVO4
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Peer-reviewed
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Authors
Yokota, H
Hasegawa, N
Glazer, M
Salje, EKH
Uesu, Y
Abstract
Ferroelastic domain boundaries in semiconductor bismuth vanadate, BiVO4, are examined using second harmonic generation microscopy. Although the bulk is centrosymmetric, domain boundaries produce homogeneous second harmonic (SH) signals. The polarization dependences of SH intensities exhibit strong anisotropy compatible with the polar symmetry m. The present results are compared with the experimental results of other ferroelastics we have observed so far. Unlike other ferroelastic materials, the directions of the SH maxima are in the same direction for all domain boundaries.
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51 Physical Sciences
Journal Title
Applied Physics Letters
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Journal ISSN
0003-6951
1077-3118
1077-3118
Volume Title
116
Publisher
AIP Publishing
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All rights reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/P024904/1)