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dc.contributor.authorDriscoll, Judithen
dc.date.accessioned2020-07-16T00:33:55Z
dc.date.available2020-07-16T00:33:55Z
dc.date.issued2020-10-22en
dc.identifier.issn1616-301X
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/308003
dc.description.abstractMemristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides have been widely used as resistive switching materials in memristors. Interface-type memristors based on ferroelectric materials are emerging as alternatives in the development of high-performance memory devices. A clear understanding of the switching mechanisms in this type of memristors, however, is still in its early stages. By comparing the bipolar switching in different systems, it is found that the switchable diode effect in ferroelectric memristors is controlled by polarization modulated Schottky barrier height and polarization coupled interfacial deep states trapping/de-trapping. Using semiconductor theories with considering polarization effects, a phenomenological theory is developed to explain the current-voltage behavior at the metal/ferroelectric interface. These findings reveal the critical role of the interaction among polarization charges, interfacial defects and Schottky interface in controlling ferroelectric resistive switching and offer guidance to design ferroelectric memristors with enhanced performance.
dc.description.sponsorshipEPRSC, grant EP/T012218/1. UK Royal Academy of Engineering Grant CiET1819_24
dc.publisherWiley-Blackwell
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.titleCouplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switchingen
dc.typeArticle
prism.publicationDate2020en
prism.publicationNameAdvanced Functional Materialsen
dc.identifier.doi10.17863/CAM.55099
dcterms.dateAccepted2020-07-02en
rioxxterms.versionofrecord10.1002/adfm.202000664en
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserveden
rioxxterms.licenseref.startdate2020-10-22en
dc.contributor.orcidDriscoll, Judith [0000-0003-4987-6620]
rioxxterms.typeJournal Article/Reviewen
pubs.funder-project-idEPSRC (EP/T012218/1)
pubs.funder-project-idRoyal Academy of Engineering (RAEng) (CiET1819\24)
cam.issuedOnline2020-08-06en
cam.orpheus.successMon Jun 14 07:34:44 BST 2021 - The item has an open VoR version.*
cam.orpheus.counter50*
rioxxterms.freetoread.startdate2100-01-01


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Attribution-NonCommercial-NoDerivatives 4.0 International
Except where otherwise noted, this item's licence is described as Attribution-NonCommercial-NoDerivatives 4.0 International