Defects in complex oxide thin films for electronics and energy applications: Challenges and opportunities
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Li, W., Shi, J., Zhang, K., & Macmanus-Driscoll, J. (2020). Defects in complex oxide thin films for electronics and energy applications: Challenges and opportunities. Materials Horizons, 7 (11), 2832-2859. https://doi.org/10.1039/d0mh00899k
Complex transition-metal oxides (TMOs) are critical materials for cutting-edge electronics and energy-related technologies, on the basis of their intriguing properties including ferroelectricity, magnetism, superconductivity, (photo- and electro-) catalytic activity, ionic conductivity, etc. These properties are fundamentally determined by the partially occupied TM d orbitals and the corresponding local coordination environments, which are sensitive to defects (or impurities), compositions, grain boundaries, surface and interfaces, etc. Recently, motivated by the advance in thin film epitaxy techniques, complex oxide research community has shown great interests in controlling defects for enhanced or even unprecedented functional properties. In this review, we provide an overview on recent progress in tuning the functional properties of TMOs thin films via defect engineering. We begin with a brief introduction to the defect chemistry of TMOs, including types of defects and their effects on local atomic structure, electron configurations and electronic structure, etc. We then review recent research efforts in engineering defects in TMOs for novel functionalities, such as ferroelectricity, magnetism, multi-ferroelectricity and dielectricity, two-dimensional electron/hole gas, metal-insulator transitions, resistive switching, ionic conductivity, photo-electrocatalysis, etc. We also provide insights into understanding the defect-structure-property relationship from the perspective of electronic structure. Finally, challenges and perspectives on control of defects for design of novel devices are discussed.
J.L.M.-D. also acknowledges support from the Royal Academy of Engineering, Grant CiET1819_24, and the ERC POC grant, 779444, Portapower. K.H.L.Z. is grateful for funding support from the National Natural Science Foundation of China (Grant No. 21872116).
Isaac Newton Trust (18.23(G))
Royal Academy of Engineering (RAEng) (CiET1819\24)
Leverhulme Trust (RPG-2015-017)
European Commission Horizon 2020 (H2020) ERC (779444)
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External DOI: https://doi.org/10.1039/d0mh00899k
This record's URL: https://www.repository.cam.ac.uk/handle/1810/308291
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