Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
View / Open Files
Authors
Pagnano, D
Sun, J
Garg, R
Kim, H
Ostermaier, C
Imam, M
Publication Date
2019-11-11Journal Title
Applied Physics Letters
ISSN
0003-6951
Volume
115
Issue
20
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Pagnano, D., Longobardi, G., Udrea, F., Sun, J., Garg, R., Kim, H., Ostermaier, C., et al. (2019). Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate. Applied Physics Letters, 115 (20)https://doi.org/10.1063/1.5121637
Sponsorship
EPSRC (EP/P024947/1)
Identifiers
External DOI: https://doi.org/10.1063/1.5121637
This record's URL: https://www.repository.cam.ac.uk/handle/1810/308754
Rights
Publisher's own licence