Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate

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Authors

Pagnano, D

  Longobardi, Giorgia

  Udrea, Florin

Sun, J

Garg, R

Kim, H

Ostermaier, C

Imam, M

Charles, A

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Publication Date

2019-11-11

Journal Title

Applied Physics Letters

ISSN

0003-6951

Volume

115

Issue

20

Type

Article

This Version

VoR

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Citation

Pagnano, D., Longobardi, G., Udrea, F., Sun, J., Garg, R., Kim, H., Ostermaier, C., et al. (2019). Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate. Applied Physics Letters, 115 (20)https://doi.org/10.1063/1.5121637

Embargo Lift Date

2020-11-11

Identifiers

External DOI: https://doi.org/10.1063/1.5121637

This record's URL: https://www.repository.cam.ac.uk/handle/1810/308754



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