Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate

Pagnano, D; Longobardi, Giorgia; Udrea, Florin; Sun, J; Garg, R; Kim, H; Ostermaier, C; Imam, M; Charles, A

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Authors

Pagnano, D

Longobardi, Giorgia

Udrea, Florin

Sun, J

Garg, R

Kim, H

Ostermaier, C

Publication Date

2019-11-11

Journal Title

Applied Physics Letters

ISSN

0003-6951

Volume

115

Issue

Type

Article

This Version

VoR

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Citation

Pagnano, D., Longobardi, G., Udrea, F., Sun, J., Garg, R., Kim, H., Ostermaier, C., et al. (2019). Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate. Applied Physics Letters, 115 (20)https://doi.org/10.1063/1.5121637

Sponsorship

EPSRC (EP/P024947/1)

Identifiers

External DOI: https://doi.org/10.1063/1.5121637

This record's URL: https://www.repository.cam.ac.uk/handle/1810/308754

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Publisher's own licence