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dc.contributor.authorRoble, A. A.
dc.contributor.authorPatra, S. K.
dc.contributor.authorMassabuau, F.
dc.contributor.authorFrentrup, M.
dc.contributor.authorLeontiadou, M. A.
dc.contributor.authorDawson, P.
dc.contributor.authorKappers, M. J.
dc.contributor.authorOliver, R. A.
dc.contributor.authorGraham, D. M.
dc.contributor.authorSchulz, S.
dc.date.accessioned2020-12-10T16:22:02Z
dc.date.available2020-12-10T16:22:02Z
dc.date.issued2019-12-11
dc.date.submitted2019-07-04
dc.identifier.others41598-019-53693-2
dc.identifier.other53693
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/314969
dc.description.abstractAbstract: We report on a combined theoretical and experimental study of the impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN multi-quantum well systems. The presence of carrier localization effects in this system was demonstrated by experimental observations, such as the “S-shape” temperature dependence of the photoluminescence (PL) peak energy, and non-exponential PL decay curves that varied across the PL spectra at 10 K. A three-dimensional modified continuum model, coupled with a self-consistent Hartree scheme, was employed to gain insight into the electronic and optical properties of the experimentally studied c-plane GaN/AlGaN quantum wells. This model confirmed the existence of strong hole localization arising from the combined effects of the built-in polarization field along the growth direction and the alloy fluctuations at the quantum well/barrier interface. However, for electrons these localization effects are less pronounced in comparison to the holes. Furthermore, our calculations show that the attractive Coulomb interaction between electron and hole results in exciton localization. This behavior is in contrast to the picture of independently localized electrons and holes, often used to explain the radiative recombination process in c-plane InGaN/GaN quantum well systems.
dc.languageen
dc.publisherNature Publishing Group UK
dc.rightsAttribution 4.0 International (CC BY 4.0)en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectArticle
dc.subject/639/301/119
dc.subject/639/301/1005
dc.subject/639/301/1019
dc.subject/639/301/357
dc.subject/639/301/1034
dc.subject/639/925
dc.subject/639/624
dc.subject/639/766
dc.subjectarticle
dc.titleImpact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c -plane GaN/AlGaN quantum wells
dc.typeArticle
dc.date.updated2020-12-10T16:22:01Z
prism.issueIdentifier1
prism.publicationNameScientific Reports
prism.volume9
dc.identifier.doi10.17863/CAM.62076
dcterms.dateAccepted2019-10-01
rioxxterms.versionofrecord10.1038/s41598-019-53693-2
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/
dc.identifier.eissn2045-2322
pubs.funder-project-idScience Foundation Ireland (13/SIRG/2210, 13/SIRG/2210)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M010589/1, EP/M010589/1, EP/M010589/1, EP/M010589/1, EP/M010589/1)
pubs.funder-project-idRoyal Society (IE151046, IE151046, IE151046)


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Attribution 4.0 International (CC BY 4.0)
Except where otherwise noted, this item's licence is described as Attribution 4.0 International (CC BY 4.0)