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dc.contributor.authorJiang, Nian
dc.contributor.authorJoyce, Hannah J.
dc.contributor.authorParkinson, Patrick
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorTan, Hark Hoe
dc.contributor.authorJagadish, Chennupati
dc.date.accessioned2020-12-22T19:00:53Z
dc.date.available2020-12-22T19:00:53Z
dc.date.issued2020-12-07
dc.date.submitted2020-09-17
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/315473
dc.description.abstractThe semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of nanowire surfaces on nanowire optoelectronic properties is necessary for engineering related devices. We present a systematic study of the non-uniform optical properties of Au-catalyzed GaAs/AlGaAs core–shell nanowires introduced by changes in the sidewall faceting. Significant variation in intra-wire photoluminescence (PL) intensity and PL lifetime (τPL) was observed along the nanowire axis, which was strongly correlated with the variation of sidewall facets from {112} to {110} from base to tip. Faster recombination occurred in the vicinity of {112}-oriented GaAs/AlGaAs interfaces. An alternative nanowire heterostructure, the radial quantum well tube consisting of a GaAs layer sandwiched between two AlGaAs barrier layers, is proposed and demonstrates superior uniformity of PL emission along the entire length of nanowires. The results emphasize the significance of nanowire facets and provide important insights for nanowire device design.
dc.languageen
dc.publisherFrontiers Media S.A.
dc.rightsAttribution 4.0 International (CC BY 4.0)en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectChemistry
dc.subjectnanowire
dc.subjectphotoluminescence (PL)
dc.subjectnanowire sidewall facets
dc.subjectsurface recombination
dc.subjectuniformity
dc.subjectGaAs-AlGaAs
dc.titleFacet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires
dc.typeArticle
dc.date.updated2020-12-22T19:00:52Z
prism.publicationNameFrontiers in Chemistry
prism.volume8
dc.identifier.doi10.17863/CAM.62580
dcterms.dateAccepted2020-11-05
rioxxterms.versionofrecord10.3389/fchem.2020.607481
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/
dc.identifier.eissn2296-2646


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Attribution 4.0 International (CC BY 4.0)
Except where otherwise noted, this item's licence is described as Attribution 4.0 International (CC BY 4.0)