Exciton-phonon coupling strength in single-layer MoSe2 at room temperature.
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Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton-phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A'1 optical phonons. Analysis of beating maps combined with simulations provides the exciton-phonon coupling. We get a Huang-Rhys factor ~1, larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton-phonon coupling also in other heterogeneous semiconducting systems, with a spatial resolution ~260 nm, and provides design-relevant parameters for the development of optoelectronic devices.
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2041-1723
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EPSRC (via University of Manchester) (R119256)
European Research Council (842251)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (881603)
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/K017144/1)
European Research Council (319277)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (820378)