Exciton-phonon coupling strength in single-layer MoSe<sub>2</sub> at room temperature.
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Li, D., Trovatello, C., Dal Conte, S., Nuß, M., Soavi, G., Wang, G., Ferrari, A., et al. (2021). Exciton-phonon coupling strength in single-layer MoSe<sub>2</sub> at room temperature.. Nature communications, 12 (1), 954. https://doi.org/10.1038/s41467-021-20895-0
Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling plays a key role in determining the (opto)electronic properties of 1L-TMDs. However, the EXPC strength has not been measured at room temperature. Here, we develop two-dimensional (2D) micro-spectroscopy to determine EXPC of 1L-MoSe2. We detect beating signals as a function of waiting time T, induced by the coupling between the A exciton and the A'1 optical phonon. Analysis of 2D beating maps provides the EXPC with the help of simulations. The Huang–Rhys factor of ~1 is larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure EXPC also in other 1L-TMDs and heterogeneous semiconducting systems with a spatial resolution ~260 nm, and will provide design-relevant parameters for the development of novel optoelectronic devices.
EPSRC (via University of Manchester) (R119256)
European Commission Horizon 2020 (H2020) ERC (842251)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (881603)
EC FP7 ERC (319277)
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External DOI: https://doi.org/10.1038/s41467-021-20895-0
This record's URL: https://www.repository.cam.ac.uk/handle/1810/315512
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