It is shown here that silicon (Si) based solar cells can be deposited by physical vapour deposition (PVD) methods only. These cells are called the PVD-Si cells. Their processing eliminates the deposition methods involving high temperature processing steps, and / or expensive, toxic and flammable gases used for processing conventional solar cells with Si absorbers. The PVD-Si cell design investigated has the structure of ITO | MoOx | c-Si | LiF | Al. When this cell is deposited on an untextured crystalline (c-Si) wafer, it has a fill factor value of 81.6% under the standard test conditions (STC). In order to improve the amount of short-circuit current density (Jsc) generated, this cell is also demonstrated on a textured c-Si wafer, achieving Jsc of 35.94 mA/cm2 under STC.