Show simple item record

dc.contributor.authorNajafidehaghani, Emad
dc.contributor.authorGan, Ziyang
dc.contributor.authorGeorge, Antony
dc.contributor.authorLehnert, Tibor
dc.contributor.authorNgo, Gia Quyet
dc.contributor.authorNeumann, Christof
dc.contributor.authorBucher, Tobias
dc.contributor.authorStaude, Isabelle
dc.contributor.authorKaiser, David
dc.contributor.authorVogl, Tobias
dc.contributor.authorHübner, Uwe
dc.contributor.authorKaiser, Ute
dc.contributor.authorEilenberger, Falk
dc.contributor.authorTurchanin, Andrey
dc.date.accessioned2021-05-04T10:10:13Z
dc.date.available2021-05-04T10:10:13Z
dc.date.issued2021-05-04
dc.date.submitted2021-02-22
dc.identifier.issn1616-301X
dc.identifier.issn1616-3028
dc.identifier.otheradfm202101086
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/321897
dc.descriptionFunder: European Union's Horizon 2020
dc.descriptionFunder: Ministry of Science, Research and the Arts
dc.descriptionFunder: Max Planck School of Photonics
dc.descriptionFunder: European Union; Id: http://dx.doi.org/10.13039/501100000780
dc.descriptionFunder: European Social Funds
dc.description.abstractAbstract: Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in‐plane p–n junctions for sub‐nanometer thin low‐power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one‐pot chemical vapor deposition process yielding MoSe2‐WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two‐step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High‐resolution transmission electron microscopy further confirms the high‐quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self‐powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated.
dc.languageen
dc.subjectResearch Article
dc.subjectResearch Articles
dc.subjectlateral heterostructures
dc.subjectlight‐emitting diode
dc.subjectp–n junction
dc.subjecttransition metal dichalcogenides monolayers
dc.subject2D devices
dc.title1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis
dc.typeArticle
dc.date.updated2021-05-04T10:10:13Z
prism.publicationNameAdvanced Functional Materials
dc.identifier.doi10.17863/CAM.69355
rioxxterms.versionofrecord10.1002/adfm.202101086
rioxxterms.versionAO
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.contributor.orcidTurchanin, Andrey [0000-0003-2388-1042]
pubs.funder-project-idDeutsche Forschungsgemeinschaft (275/257‐1)
pubs.funder-project-idDFG (TU149/9‐1)
pubs.funder-project-idFederal Ministry of Education and Science of Germany (13XP5053A)
pubs.funder-project-idFederal State of Thuringia (2018FGR00088.)


Files in this item

Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record