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dc.contributor.authorBretscher, Hope
dc.contributor.authorLi, Zhaojun
dc.contributor.authorXiao, James
dc.contributor.authorQiu, Diana Yuan
dc.contributor.authorRefaely-Abramson, Sivan
dc.contributor.authorAlexander-Webber, Jack
dc.contributor.authorTanoh, Arelo
dc.contributor.authorFan, Ye
dc.contributor.authorDelport, Géraud
dc.contributor.authorWilliams, Cyan A
dc.contributor.authorStranks, Samuel
dc.contributor.authorHofmann, Stephan
dc.contributor.authorNeaton, Jeffrey B
dc.contributor.authorLouie, Steven G
dc.contributor.authorRao, Akshay
dc.date.accessioned2021-05-10T23:31:46Z
dc.date.available2021-05-10T23:31:46Z
dc.date.issued2021-05-25
dc.identifier.issn1936-0851
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/322241
dc.description.abstractStructural defects vary the optoelectronic properties of monolayer transition metal dichalcogenides, leading to concerted efforts to control defect type and density via materials growth or postgrowth passivation. Here, we explore a simple chemical treatment that allows on-off switching of low-lying, defect-localized exciton states, leading to tunable emission properties. Using steady-state and ultrafast optical spectroscopy, supported by ab initio calculations, we show that passivation of sulfur vacancy defects, which act as exciton traps in monolayer MoS2 and WS2, allows for controllable and improved mobilities and an increase in photoluminescence up to 275-fold, more than twice the value achieved by other chemical treatments. Our findings suggest a route for simple and rational defect engineering strategies for tunable and switchable electronic and excitonic properties through passivation.
dc.format.mediumPrint-Electronic
dc.languageeng
dc.publisherAmerican Chemical Society (ACS)
dc.rightsAll rights reserved
dc.titleRational Passivation of Sulfur Vacancy Defects in Two-Dimensional Transition Metal Dichalcogenides.
dc.typeArticle
prism.publicationDate2021
prism.publicationNameACS Nano
dc.identifier.doi10.17863/CAM.69700
dcterms.dateAccepted2021-05-07
rioxxterms.versionofrecord10.1021/acsnano.1c01220
rioxxterms.versionAM
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.licenseref.startdate2021-05-13
dc.contributor.orcidBretscher, Hope [0000-0001-6551-4721]
dc.contributor.orcidXiao, James [0000-0002-1713-5599]
dc.contributor.orcidQiu, Diana Yuan [0000-0003-3067-6987]
dc.contributor.orcidRefaely-Abramson, Sivan [0000-0002-7031-8327]
dc.contributor.orcidAlexander-Webber, Jack [0000-0002-9374-7423]
dc.contributor.orcidTanoh, Arelo [0000-0003-2494-5984]
dc.contributor.orcidFan, Ye [0000-0003-0998-5881]
dc.contributor.orcidStranks, Samuel [0000-0002-8303-7292]
dc.contributor.orcidHofmann, Stephan [0000-0001-6375-1459]
dc.contributor.orcidLouie, Steven G [0000-0003-0622-0170]
dc.contributor.orcidRao, Akshay [0000-0003-4261-0766]
dc.identifier.eissn1936-086X
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/M006360/1)
pubs.funder-project-idEuropean Research Council (758826)
pubs.funder-project-idRoyal Commission for the Exhibition of 1851 (RF474/2016)
pubs.funder-project-idRoyal Society (DHF\F1\191163)
pubs.funder-project-idEuropean Research Council (756962)
cam.issuedOnline2021-05-13
cam.orpheus.successMon May 24 07:30:32 BST 2021 - Embargo updated
cam.orpheus.counter1
rioxxterms.freetoread.startdate2022-05-13


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