Optoelectronic mixing with high-frequency graphene transistors.
Published version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Abstract
Graphene is ideally suited for optoelectronics. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We show how high speed optoelectronic mixing can be achieved with high frequency (~20 GHz bandwidth) graphene field effect transistors (GFETs). These devices mix an electrical signal injected into the GFET gate and a modulated optical signal onto a single layer graphene (SLG) channel. The photodetection mechanism and the resulting photocurrent sign depend on the SLG Fermi level (EF). At low EF (<130 meV), a positive photocurrent is generated, while at large EF (>130 meV), a negative photobolometric current appears. This allows our devices to operate up to at least 67 GHz. Our results pave the way for GFETs optoelectronic mixers for mm-wave applications, such as telecommunications and radio/light detection and ranging (RADAR/LIDARs.).
Description
Keywords
Journal Title
Conference Name
Journal ISSN
2041-1723
Volume Title
Publisher
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/K017144/1)
European Commission (604391)
Engineering and Physical Sciences Research Council (EP/L016087/1)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (via University of Manchester) (R119256)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
Engineering and Physical Sciences Research Council (EP/G042357/1)
European Research Council (319277)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (881603)