Optoelectronic mixing with high-frequency graphene transistors.
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Montanaro, A., Wei, W., De Fazio, D., Sassi, U., Soavi, G., Aversa, P., Ferrari, A., et al. (2021). Optoelectronic mixing with high-frequency graphene transistors.. Nature communications, 12 (1), 2728. https://doi.org/10.1038/s41467-021-22943-1
Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.
Royal Society (TG102524)
EC FP7 FET FLAGSHIP (604391)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (via University of Manchester) (R119256)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
EC FP7 ERC (319277)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (881603)
External DOI: https://doi.org/10.1038/s41467-021-22943-1
This record's URL: https://www.repository.cam.ac.uk/handle/1810/324049
Attribution 4.0 International
Licence URL: https://creativecommons.org/licenses/by/4.0/