Pure single-photon emission from an InGaN/GaN quantum dot
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Abstract
Single-photon emitters with high degrees of purity are required for photonic-based quantum technologies. InGaN/GaN quantum dots are promising candidates for the development of single-photon emitters but have typically exhibited emission with insufficient purity. Here, pulsed single-photon emission with high purity is measured from an InGaN quantum dot. A raw g(2)(0) value of 0.043 ± 0.009 with no corrections whatsoever is achieved under quasi-resonant pulsed excitation. Such a low value is, in principle, sufficient for use in quantum key distribution systems.
Description
Keywords
5108 Quantum Physics, 51 Physical Sciences
Journal Title
APL Materials
Conference Name
Journal ISSN
2166-532X
2166-532X
2166-532X
Volume Title
9
Publisher
AIP Publishing
Publisher DOI
Rights
All rights reserved
Sponsorship
Engineering and Physical Sciences Research Council (EP/M011682/1)
Engineering and Physical Sciences Research Council (EP/J003603/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)
Engineering and Physical Sciences Research Council (EP/J003603/1)
Engineering and Physical Sciences Research Council (EP/M010589/1)
Engineering and Physical Sciences Research Council (EP/R04502X/1)
This work was supported by JSPS KAKENHI project (No. 19K15039), the
KAKENHI Grant-in-Aid for Specially Promoted Research (No. 15H05700), by the TAKUETSU
program of the Ministry of Education, Culture, Sports, Science and Technology, Japan, and the UK
Engineering and Physical Sciences Research Council Grant (No. EP/M011682/1).