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Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells

Published version
Peer-reviewed

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Authors

Barrett, R M 
Ahumada-Lazo, R 
Alanis, J A 
Parkinson, P 
Church, S A 

Abstract

Abstract: Micro-photoluminescence maps reveal micron-scale spatial variation in intensity, peak emission energy and bandwidth across InGaN/GaN quantum wells. To investigate the effect of this spatial variation on measurements of the dependence of emission efficiency on carrier density, excitation power-dependent emission was collected from a bright and dark region on each of blue-and green emitting samples. The onset of efficiency droop was found to occur at a greater carrier density in the dark regions than in the bright, by factors of 1.2 and 1.8 in the blue and green-emitting samples, respectively. By spatially integrating the emission from progressively larger areas, it is also shown that collection areas greater than ∼50 μm in diameter are required to reduce the intensity variation to less than 10%.

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Paper

Journal Title

Journal of Physics: Conference Series

Conference Name

Journal ISSN

1742-6588
1742-6596

Volume Title

1919

Publisher

IOP Publishing