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Strain in heterogeneous quantum devices with atomic layer deposition

Published version
Peer-reviewed

Change log

Authors

O'Sullivan, J 
Zollitsch, CW 
Thomas, CN 
Withington, S 

Abstract

jats:titleAbstract</jats:title> jats:pWe investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left jats:italicT</jats:italic> jats:sub2</jats:sub> (or temporal inhomogeneities) unchanged in these natural silicon devices.</jats:p>

Description

Keywords

51 Physical Sciences, 5104 Condensed Matter Physics

Journal Title

Materials for Quantum Technology

Conference Name

Journal ISSN

2633-4356
2633-4356

Volume Title

1

Publisher

IOP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/P510270/1)
Horizon 2020 Framework Programme (771493 (LOQO-MOTIONS))