Strain in heterogeneous quantum devices with atomic layer deposition
Published version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Kennedy, OW https://orcid.org/0000-0002-1945-960X
O'Sullivan, J
Zollitsch, CW
Thomas, CN
Withington, S
Abstract
jats:titleAbstract</jats:title> jats:pWe investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left jats:italicT</jats:italic> jats:sub2</jats:sub> (or temporal inhomogeneities) unchanged in these natural silicon devices.</jats:p>
Description
Keywords
51 Physical Sciences, 5104 Condensed Matter Physics
Journal Title
Materials for Quantum Technology
Conference Name
Journal ISSN
2633-4356
2633-4356
2633-4356
Volume Title
1
Publisher
IOP Publishing
Publisher DOI
Sponsorship
Engineering and Physical Sciences Research Council (EP/P510270/1)
Horizon 2020 Framework Programme (771493 (LOQO-MOTIONS))
Horizon 2020 Framework Programme (771493 (LOQO-MOTIONS))