Strain in heterogeneous quantum devices with atomic layer deposition

Abstract

<jats:title>Abstract</jats:title> <jats:p>We investigated the use of dielectric layers produced by atomic layer deposition (ALD) as an approach to strain mitigation in composite silicon/superconductor devices operating at cryogenic temperatures. We show that the addition of an ALD layer acts to reduce the strain of spins closest to silicon/superconductor interface where strain is highest. We show that appropriately biasing our devices at the hyperfine clock transition of bismuth donors in silicon, we can remove strain broadening and that the addition of ALD layers left <jats:italic>T</jats:italic> <jats:sub>2</jats:sub> (or temporal inhomogeneities) unchanged in these natural silicon devices.</jats:p>