Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation

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Authors
  Chun, YT
  Lee, J
  Chu, D
Publication Date
2021
Journal Title
Applied Physics Letters
ISSN
0003-6951
Publisher
AIP Publishing
Volume
119
Issue
20
Pages
203102-203102
Language
en
Type
Article
This Version
AM
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Citation
Chun, Y., Lee, J., & Chu, D. (2021). Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation. Applied Physics Letters, 119 (20), 203102-203102. https://doi.org/10.1063/5.0066577
Keywords
Neurosciences
Identifiers
External DOI: https://doi.org/10.1063/5.0066577
This record's URL: https://www.repository.cam.ac.uk/handle/1810/330952
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Licence URL: http://www.rioxx.net/licenses/all-rights-reserved
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