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dc.contributor.authorHaselmann, Ulrich
dc.contributor.authorSuyolcu, Y Eren
dc.contributor.authorWu, Ping-Chun
dc.contributor.authorIvanov, Iurii
dc.contributor.authorKnez, Daniel
dc.contributor.authorvan Aken, Peter A
dc.contributor.authorChu, Ying-Hao
dc.contributor.authorZhang, Zaoli
dc.date.accessioned2021-12-03T00:30:23Z
dc.date.available2021-12-03T00:30:23Z
dc.date.issued2021-10-26
dc.identifier.issn2637-6113
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/331220
dc.description.abstractThe interaction of oxygen vacancies and ferroelectric domain walls is of great scientific interest because it leads to different domain-structure behaviors. Here, we use high-resolution scanning transmission electron microscopy to study the ferroelectric domain structure and oxygen-vacancy ordering in a compressively strained Bi0.9Ca0.1FeO3-δ thin film. It was found that atomic plates, in which agglomerated oxygen vacancies are ordered, appear without any periodicity between the plates in out-of-plane and in-plane orientation. The oxygen non-stoichiometry with δ ≈ 1 in FeO2-δ planes is identical in both orientations and shows no preference. Within the plates, the oxygen vacancies form 1D channels in a pseudocubic [010] direction with a high number of vacancies that alternate with oxygen columns with few vacancies. These plates of oxygen vacancies always coincide with charged domain walls in a tail-to-tail configuration. Defects such as ordered oxygen vacancies are thereby known to lead to a pinning effect of the ferroelectric domain walls (causing application-critical aspects, such as fatigue mechanisms and countering of retention failure) and to have a critical influence on the domain-wall conductivity. Thus, intentional oxygen vacancy defect engineering could be useful for the design of multiferroic devices with advanced functionality.
dc.format.mediumPrint-Electronic
dc.publisherAmerican Chemical Society (ACS)
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectBiFeO3
dc.subjectoxygen vacancy
dc.subjectordering in oxygen vacancy plates
dc.subjectcharged domain wall
dc.subjectaberration-corrected STEM
dc.subjectdomain-wall pinning
dc.subjectdomain-wall nanoelectronics
dc.titleNegatively Charged In-Plane and Out-Of-Plane Domain Walls with Oxygen-Vacancy Agglomerations in a Ca-Doped Bismuth-Ferrite Thin Film.
dc.typeArticle
dc.publisher.departmentDepartment of Materials Science And Metallurgy
dc.date.updated2021-12-02T09:30:28Z
prism.endingPage4508
prism.issueIdentifier10
prism.publicationDate2021
prism.publicationNameACS Appl Electron Mater
prism.startingPage4498
prism.volume3
dc.identifier.doi10.17863/CAM.78665
dcterms.dateAccepted2021-09-12
rioxxterms.versionofrecord10.1021/acsaelm.1c00638
rioxxterms.versionVoR
dc.contributor.orcidSuyolcu, Y Eren [0000-0003-0988-5194]
dc.contributor.orcidIvanov, Iurii [0000-0003-0271-5504]
dc.contributor.orcidKnez, Daniel [0000-0003-0755-958X]
dc.contributor.orcidChu, Ying-Hao [0000-0002-3435-9084]
dc.contributor.orcidZhang, Zaoli [0000-0002-7717-2500]
dc.identifier.eissn2637-6113
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) Research Infrastructures (RI) (823717)
cam.issuedOnline2021-09-24
cam.depositDate2021-12-02
pubs.licence-identifierapollo-deposit-licence-2-1
pubs.licence-display-nameApollo Repository Deposit Licence Agreement


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International