Show simple item record

dc.contributor.authorLi, Z
dc.contributor.authorPeng, B
dc.contributor.authorLin, ML
dc.contributor.authorLeng, YC
dc.contributor.authorZhang, B
dc.contributor.authorPang, C
dc.contributor.authorTan, PH
dc.contributor.authorMonserrat Sanchez, Bartomeu
dc.contributor.authorChen, F
dc.date.accessioned2021-12-15T10:08:12Z
dc.date.available2021-12-15T10:08:12Z
dc.date.issued2021-11-26
dc.date.submitted2021-06-16
dc.identifier.issn2397-7132
dc.identifier.others41699-021-00268-3
dc.identifier.other268
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/331436
dc.description.abstract<jats:title>Abstract</jats:title><jats:p>Information technology demands high-speed optoelectronic devices, but going beyond the one terahertz (THz) barrier is challenging due to the difficulties associated with generating, detecting, and processing high-frequency signals. Here, we show that femtosecond-laser-driven phonons can be utilized to coherently manipulate the excitonic properties of semiconductors at THz frequencies. The precise control of the pump and subsequent time-delayed broadband probe pulses enables the simultaneous generation and detection processes of both periodic lattice vibrations and their couplings with electronic states. Combining ultralow frequency Raman spectroscopy with first-principles calculations, we identify the unique phonon mode-selective and probe-energy dependent features of electron–phonon interactions in layered PdSe<jats:sub>2</jats:sub>. Two distinctive types of coherent phonon excitations could couple preferentially to different types of electronic excitations: the intralayer (4.3 THz) mode to carriers and the interlayer (0.35 THz) mode to excitons. This work provides new insights to understand the excited-state phonon interactions of 2D materials and to achieve future applications of optoelectronic devices operating at THz frequencies.</jats:p>
dc.languageen
dc.publisherSpringer Science and Business Media LLC
dc.subjectArticle
dc.subject/639/624/1020
dc.subject/639/925/930/527/1821
dc.subject/639/301/1019/385
dc.subject/639/766/119/995
dc.subjectarticle
dc.titlePhonon-assisted electronic states modulation of few-layer PdSe<inf>2</inf> at terahertz frequencies
dc.typeArticle
dc.date.updated2021-12-15T10:08:11Z
prism.issueIdentifier1
prism.publicationNamenpj 2D Materials and Applications
prism.volume5
dc.identifier.doi10.17863/CAM.78890
dcterms.dateAccepted2021-10-29
rioxxterms.versionofrecord10.1038/s41699-021-00268-3
rioxxterms.versionVoR
rioxxterms.licenseref.urihttp://creativecommons.org/licenses/by/4.0/
dc.contributor.orcidPeng, B [0000-0001-6406-663X]
dc.contributor.orcidTan, PH [0000-0001-6575-1516]
dc.contributor.orcidMonserrat Sanchez, Bartomeu [0000-0002-4233-4071]
dc.contributor.orcidChen, F [0000-0002-9277-9810]
dc.identifier.eissn2397-7132
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P020259/1)
cam.issuedOnline2021-11-26


Files in this item

Thumbnail
Thumbnail
Thumbnail

This item appears in the following Collection(s)

Show simple item record