Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
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Authors
Comish, Ella J
Loeto, Kagiso
Hammersley, Simon
Kappers, Menno J
Dawson, Phil
Oliver, Rachel A
Publication Date
2022-01-06Journal Title
Nanoscale
ISSN
2040-3364
Publisher
Royal Society of Chemistry (RSC)
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Kusch, G., Comish, E. J., Loeto, K., Hammersley, S., Kappers, M. J., Dawson, P., Oliver, R. A., & et al. (2022). Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.. Nanoscale https://doi.org/10.1039/d1nr06088k
Abstract
Time-resolved cathodoluminescence offers new possibilities for the study of semiconductor nanostructures - including defects. The versatile combination of time, spatial, and spectral resolution of the technique can provide new insights into the physics of carrier recombination at the nanoscale. Here, we used power-dependent cathodoluminescence and temperature-dependent time-resolved cathodoluminescence to study the carrier dynamics at trench defects in InGaN quantum wells - a defect commonly found in III-nitride structures. The measurements show that the emission properties of trench defects closely relate to the depth of the related basal plane stacking fault within the quantum well stack. The study of the variation of carrier decay time with detection energy across the emission spectrum provides strong evidence supporting the hypothesis that strain relaxation of the quantum wells enclosed within the trench promotes efficient radiative recombination even in the presence of an increased indium content. This result shines light on previously reported peculiar emission properties of the defect, and illustrates the use of cathodoluminescence as a powerful adaptable tool for the study of defects in semiconductors.
Sponsorship
Engineering and Physical Sciences Research Council (EP/R025193/1)
Identifiers
External DOI: https://doi.org/10.1039/d1nr06088k
This record's URL: https://www.repository.cam.ac.uk/handle/1810/331537
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