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dc.contributor.authorKusch, Gunnar
dc.contributor.authorComish, Ella J
dc.contributor.authorLoeto, Kagiso
dc.contributor.authorHammersley, Simon
dc.contributor.authorKappers, Menno J
dc.contributor.authorDawson, Phil
dc.contributor.authorOliver, Rachel
dc.contributor.authorMassabuau, Fabien C-P
dc.date.accessioned2021-12-16T00:30:40Z
dc.date.available2021-12-16T00:30:40Z
dc.date.issued2022-01-06
dc.identifier.issn2040-3364
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/331537
dc.description.abstractTime-resolved cathodoluminescence offers new possibilities for the study of semiconductor nanostructures - including defects. The versatile combination of time, spatial, and spectral resolution of the technique can provide new insights into the physics of carrier recombination at the nanoscale. Here, we used power-dependent cathodoluminescence and temperature-dependent time-resolved cathodoluminescence to study the carrier dynamics at trench defects in InGaN quantum wells - a defect commonly found in III-nitride structures. The measurements show that the emission properties of trench defects closely relate to the depth of the related basal plane stacking fault within the quantum well stack. The study of the variation of carrier decay time with detection energy across the emission spectrum provides strong evidence supporting the hypothesis that strain relaxation of the quantum wells enclosed within the trench promotes efficient radiative recombination even in the presence of an increased indium content. This result shines light on previously reported peculiar emission properties of the defect, and illustrates the use of cathodoluminescence as a powerful adaptable tool for the study of defects in semiconductors.
dc.publisherRoyal Society of Chemistry (RSC)
dc.rightsAll Rights Reserved
dc.rights.urihttp://www.rioxx.net/licenses/all-rights-reserved
dc.titleCarrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.
dc.typeArticle
dc.publisher.departmentDepartment of Materials Science And Metallurgy
dc.date.updated2021-12-14T16:50:29Z
prism.publicationNameNanoscale
dc.identifier.doi10.17863/CAM.78991
rioxxterms.versionofrecord10.1039/d1nr06088k
rioxxterms.versionAM
dc.contributor.orcidKusch, Gunnar [0000-0003-2743-1022]
dc.contributor.orcidOliver, Rachel [0000-0003-0029-3993]
dc.contributor.orcidMassabuau, Fabien C-P [0000-0003-1008-1652]
dc.identifier.eissn2040-3372
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/R025193/1)
cam.issuedOnline2022
cam.orpheus.success2021-12-15 - Embargo set during processing via Fast-track
cam.depositDate2021-12-14
pubs.licence-identifierapollo-deposit-licence-2-1
pubs.licence-display-nameApollo Repository Deposit Licence Agreement
rioxxterms.freetoread.startdate2022-12-25


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