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Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

Accepted version
Peer-reviewed

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Type

Article

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Abstract

jats:pSemiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron–phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron–phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.</jats:p>

Description

Keywords

5108 Quantum Physics, 40 Engineering, 51 Physical Sciences

Journal Title

Applied Physics Letters

Conference Name

Journal ISSN

0003-6951
1077-3118

Volume Title

119

Publisher

AIP Publishing

Rights

Publisher's own licence
Sponsorship
Engineering and Physical Sciences Research Council (EP/N509620/1)
Royal Academy of Engineering (RAEng) (CiET1819\24)
Engineering and Physical Sciences Research Council (EP/P007767/1)
European Commission Horizon 2020 (H2020) ERC (882929)