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dc.contributor.authorRondiya, SR
dc.contributor.authorJagt, Robert
dc.contributor.authorMacmanus-Driscoll, JL
dc.contributor.authorWalsh, A
dc.contributor.authorHoye, RLZ
dc.date.accessioned2022-01-11T00:33:03Z
dc.date.available2022-01-11T00:33:03Z
dc.date.issued2021-11-29
dc.identifier.issn0003-6951
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/332615
dc.description.abstractSemiconductors based on bismuth halides have gained attention for a wide range of electronic applications, including photovoltaics, light-emitting diodes, and radiation detectors. Their appeal is due to their low toxicity, high environmental stability under ambient conditions, and easy processability by a wide range of scalable methods. The performance of Bi-based semiconductors is dictated by electron-phonon interactions, which limit carrier mobilities and can also influence optoelectronic performance, for example, by giving rise to a large Stokes shift for photoluminescence, unavoidable energy loss channels, or shallow optical absorption onsets. In this Perspective, we discuss the recent understanding of how polarons and self-trapped excitons/carriers form in Bi-based semiconductors (particularly for the case of Cs2AgBiBr6), their impact on the optoelectronic properties of the materials, and the consequences on device performance. Finally, we discuss the opportunities that control of electron-phonon coupling enables, including stable solid-state white lighting, and the possibilities of exploiting the strong coupling found in bipolarons for quantum technologies.
dc.publisherAIP Publishing
dc.rightsPublisher's own licence
dc.titleSelf-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies
dc.typeArticle
dc.publisher.departmentDepartment of Materials Science And Metallurgy
dc.date.updated2022-01-10T15:46:39Z
prism.endingPage220501
prism.issueIdentifier22
prism.publicationDate2021
prism.publicationNameApplied Physics Letters
prism.startingPage220501
prism.volume119
dc.identifier.doi10.17863/CAM.80062
dcterms.dateAccepted2021-11-15
rioxxterms.versionofrecord10.1063/5.0071763
rioxxterms.versionAM
dc.contributor.orcidRondiya, SR [0000-0003-1350-1237]
dc.contributor.orcidJagt, Robert [0000-0002-0517-3758]
dc.contributor.orcidMacmanus-Driscoll, JL [0000-0003-4987-6620]
dc.contributor.orcidWalsh, A [0000-0001-5460-7033]
dc.contributor.orcidHoye, RLZ [0000-0002-7675-0065]
dc.identifier.eissn1077-3118
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/N509620/1)
pubs.funder-project-idRoyal Academy of Engineering (RAEng) (CiET1819\24)
cam.issuedOnline2021-11-29
cam.orpheus.success2022-01-10 - Embargo set during processing via Fast-track
cam.depositDate2022-01-10
pubs.licence-identifierapollo-deposit-licence-2-1
pubs.licence-display-nameApollo Repository Deposit Licence Agreement
rioxxterms.freetoread.startdate2021-11-29


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