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dc.contributor.authorDou, H
dc.contributor.authorGao, X
dc.contributor.authorZhang, D
dc.contributor.authorDhole, S
dc.contributor.authorQi, Z
dc.contributor.authorYang, B
dc.contributor.authorHasan, MN
dc.contributor.authorSeo, JH
dc.contributor.authorJia, Q
dc.contributor.authorHellenbrand, M
dc.contributor.authorMacManus-Driscoll, JL
dc.contributor.authorZhang, X
dc.contributor.authorWang, H
dc.date.accessioned2022-01-12T00:30:58Z
dc.date.available2022-01-12T00:30:58Z
dc.date.issued2021
dc.identifier.issn2637-6113
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/332638
dc.description.abstractResistive switching and anisotropic optical properties have been investigated in two-phase HfO2:CeO2 nanocomposite thin films of different HfO2:CeO2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO3(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO2 pillars embedded in a HfO2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO2 and CeO2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO2:CeO2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.
dc.publisherAmerican Chemical Society (ACS)
dc.rightsAll Rights Reserved
dc.rights.urihttp://www.rioxx.net/licenses/all-rights-reserved
dc.titleElectroforming-Free HfO<inf>2</inf>:CeO<inf>2</inf> Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
dc.typeArticle
dc.publisher.departmentDepartment of Materials Science And Metallurgy
dc.date.updated2022-01-10T17:48:34Z
prism.endingPage5286
prism.issueIdentifier12
prism.publicationDate2021
prism.publicationNameACS Applied Electronic Materials
prism.startingPage5278
prism.volume3
dc.identifier.doi10.17863/CAM.80083
rioxxterms.versionofrecord10.1021/acsaelm.1c00791
rioxxterms.versionAM
dc.contributor.orcidSeo, JH [0000-0002-5039-2503]
dc.contributor.orcidHellenbrand, M [0000-0002-5811-5228]
dc.contributor.orcidMacManus-Driscoll, JL [0000-0003-4987-6620]
dc.contributor.orcidZhang, X [0000-0002-8380-8667]
dc.contributor.orcidWang, H [0000-0002-7397-1209]
dc.identifier.eissn2637-6113
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/N004272/1)
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P007767/1)
pubs.funder-project-idEPSRC (EP/T012218/1)
pubs.funder-project-idRoyal Academy of Engineering (RAEng) (CiET1819\24)
pubs.funder-project-idEuropean Commission Horizon 2020 (H2020) ERC (882929)
cam.issuedOnline2021-11-20
cam.orpheus.success2022-01-11 - Embargo set during processing via Fast-track
cam.depositDate2022-01-10
pubs.licence-identifierapollo-deposit-licence-2-1
pubs.licence-display-nameApollo Repository Deposit Licence Agreement
rioxxterms.freetoread.startdate2022-11-20


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