Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride
Authors
Fan, Y
Veigang-Radulescu, VP
Pollard, AJ
Burton, O
Otto, M
Publication Date
2020Journal Title
2D Materials
ISSN
2053-1583
Publisher
IOP Publishing
Volume
7
Issue
2
Language
en
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Babenko, V., Fan, Y., Veigang-Radulescu, V., Brennan, B., Pollard, A., Burton, O., Alexander-Webber, J., et al. (2020). Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride. 2D Materials, 7 (2) https://doi.org/10.1088/2053-1583/ab6269
Description
Funder: H2020 Marie Skłodowska-Curie Actions; doi: https://doi.org/10.13039/100010665
Abstract
Hexagonal boron nitride (h-BN) is well-established as a requisite support,
encapsulant and barrier for 2D material technologies, but also recently as an
active material for applications ranging from hyperbolic metasurfaces to room
temperature single-photon sources. Cost-effective, scalable and high quality
growth techniques for h-BN layers are critically required. We utilise
widely-available iron foils for the catalytic chemical vapour deposition (CVD)
of h BN and report on the significant role of bulk dissolved species in h-BN
CVD, and specifically, the balance between dissolved oxygen and carbon. A
simple pre-growth conditioning step of the iron foils enables us to tailor an
error-tolerant scalable CVD process to give exceptionally large h-BN monolayer
domains. We also develop a facile method for the improved transfer of as-grown
h-BN away from the iron surface by means of the controlled humidity oxidation
and subsequent rapid etching of a thin interfacial iron oxide; thus, avoiding
the impurities from the bulk of the foil. We demonstrate wafer-scale (2 inch)
production and utilise this h-BN as a protective layer for graphene towards
integrated (opto) electronic device fabrication.
Keywords
Paper, Focus on Scalable Encapsulation of 2D Materials, hexagonal boron nitride, large crystal, monolayer, chemical vapor deposition, 2D materials, transfer, encapsulation
Sponsorship
European Union's Horizon 2020 research and innovation program under Grant Agreement No number 785219. European Union's Horizon 2020 research and innovation program under Grant Agreement No number 796388. the Royal Commission for the Exhibition of 1851. EU Marie Skłodowska-Curie Individual Fellowship (Global) under grant ARTIST (No. 656870). EPSRC (EP/P005152/1, and Doctoral Training Award EP/M508007/1). U.K. Department of Business, Energy and Industrial Strategy (NPL Project Number 121452).
Funder references
Engineering and Physical Sciences Research Council (EP/P005152/1)
Engineering and Physical Sciences Research Council (EP/M508007/1)
European Commission Horizon 2020 (H2020) Marie Sk?odowska-Curie actions (656870)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (785219)
Identifiers
tdmab6269, ab6269, 2dm-104582.r2
External DOI: https://doi.org/10.1088/2053-1583/ab6269
This record's URL: https://www.repository.cam.ac.uk/handle/1810/333047
Rights
Licence:
http://creativecommons.org/licenses/by/4.0/
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