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dc.contributor.authorJönsson, Adam
dc.contributor.authorSvensson, Johannes
dc.contributor.authorFiordaliso, Elisabetta Maria
dc.contributor.authorLind, Erik
dc.contributor.authorHellenbrand, Markus
dc.contributor.authorWernersson, Lars-Erik
dc.date.accessioned2022-02-07T02:13:13Z
dc.date.available2022-02-07T02:13:13Z
dc.date.issued2021-12-28
dc.identifier.issn2637-6113
dc.identifier.other34988463
dc.identifier.otherPMC8717821
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/333697
dc.description.abstractThin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length L g of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage V T shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.
dc.languageeng
dc.publisherAmerican Chemical Society (ACS)
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.sourcenlmid: 101734996
dc.sourceessn: 2637-6113
dc.titleDoping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.
dc.typeArticle
dc.date.updated2022-02-07T02:13:13Z
prism.endingPage5247
prism.issueIdentifier12
prism.publicationNameACS Appl Electron Mater
prism.startingPage5240
prism.volume3
dc.identifier.doi10.17863/CAM.81117
dcterms.dateAccepted2021-11-07
rioxxterms.versionofrecord10.1021/acsaelm.1c00729
rioxxterms.versionVoR
rioxxterms.licenseref.urihttps://creativecommons.org/licenses/by/4.0/
dc.contributor.orcidHellenbrand, Markus [0000-0002-5811-5228]
dc.identifier.eissn2637-6113
cam.issuedOnline2021-11-19


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Attribution 4.0 International
Except where otherwise noted, this item's licence is described as Attribution 4.0 International