Doping limits in p-type oxide semiconductors
Publication Date
2021Journal Title
MRS Bulletin
ISSN
0883-7694
Publisher
Springer Science and Business Media LLC
Volume
46
Issue
11
Pages
1037-1043
Language
en
Type
Article
This Version
VoR
Metadata
Show full item recordCitation
Robertson, J., & Zhang, Z. (2021). Doping limits in p-type oxide semiconductors. MRS Bulletin, 46 (11), 1037-1043. https://doi.org/10.1557/s43577-021-00211-3
Abstract
<jats:title>Abstract</jats:title><jats:p>The ability to dope a semiconductor depends on whether the Fermi level can be moved into its valence or conduction bands, on an energy scale referred to the vacuum level. For oxides, there are various suitable <jats:italic>n</jats:italic>-type oxide semiconductors, but there is a marked absence of similarly suitable <jats:italic>p</jats:italic>-type oxides. This problem is of interest not only for thin-film transistors for displays, or solar cell electrodes, but also for back-end-of-line devices for the semiconductor industry. This has led to a wide-ranging search for <jats:italic>p</jats:italic>-type oxides using high-throughput calculations. We note that some proposed <jats:italic>p</jats:italic>-type metal oxides have cation <jats:italic>s</jats:italic>-like lone pair states. The defect energies of some of these oxides were calculated in detail. The example SnTa<jats:sub>2</jats:sub>O<jats:sub>6</jats:sub> is of interest, but others have structures more closely based on perovskite structure and are found to have more <jats:italic>n</jats:italic>-type than <jats:italic>p</jats:italic>-type character.</jats:p>
<jats:p><jats:bold>Graphic abstract</jats:bold></jats:p>
Keywords
Review Article, Oxide 1.04, Electronic material 4.01, Nanoelectronics 4.01, Semiconducting 4.01, Modeling 4.04, Materials genome 4.03
Identifiers
s43577-021-00211-3, 211
External DOI: https://doi.org/10.1557/s43577-021-00211-3
This record's URL: https://www.repository.cam.ac.uk/handle/1810/333809
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Licence:
http://creativecommons.org/licenses/by/4.0/
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