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dc.contributor.authorZhang, Zhaofu
dc.contributor.authorGuo, Yuzheng
dc.contributor.authorRobertson, John
dc.date.accessioned2022-03-05T00:30:29Z
dc.date.available2022-03-05T00:30:29Z
dc.date.issued2022-02-27
dc.identifier.issn1944-8244
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/334685
dc.description.abstractWeaker Fermi level pinning (FLP) at the Schottky barriers of 2D semiconductors is electrically desirable as this would allow a minimizing of contact resistances, which presently limit device performances. Existing contacts on MoS2 have a strong FLP with a small pinning factor of only ∼0.1. Here, we show that Moire interfaces can stabilize physisorptive sites at the Schottky barriers with a much weaker interaction without significantly lengthening the bonds. This increases the pinning factor up to ∼0.37 and greatly reduces the n-type Schottky barrier height to ∼0.2 eV for certain metals such as In and Ag, which can have physisorptive sites. This then accounts for the low contact resistance of these metals as seen experimentally. Such physisorptive interfaces can be extended to similar systems to better control SBHs in highly scaled 2D devices.
dc.format.mediumPrint-Electronic
dc.publisherAmerican Chemical Society
dc.rightsAll Rights Reserved
dc.rights.urihttp://www.rioxx.net/licenses/all-rights-reserved
dc.subjectFermi level pinning
dc.subjectMoS2
dc.subjectSchottky barriers
dc.subjectmetal contacts
dc.subjectphysisorptive sites
dc.titleReduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS2/Metal Schottky Barriers.
dc.typeArticle
dc.publisher.departmentDepartment of Engineering
dc.date.updated2022-03-04T08:52:41Z
prism.numberacsami.1c23918
prism.publicationDate2022
prism.publicationNameACS Applied Materials and Interfaces
dc.identifier.doi10.17863/CAM.82103
dcterms.dateAccepted2022-02-18
rioxxterms.versionofrecord10.1021/acsami.1c23918
rioxxterms.versionAM
dc.contributor.orcidZhang, Zhaofu [0000-0002-1406-1256]
dc.identifier.eissn1944-8252
rioxxterms.typeJournal Article/Review
pubs.funder-project-idEngineering and Physical Sciences Research Council (EP/P005152/1)
cam.issuedOnline2022-02-27
cam.orpheus.success2022-03-04 - Embargo set during processing via Fast-track
cam.depositDate2022-03-04
pubs.licence-identifierapollo-deposit-licence-2-1
pubs.licence-display-nameApollo Repository Deposit Licence Agreement
rioxxterms.freetoread.startdate2023-02-27


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