Growth mechanism of TiN reaction layers produced on AlN via active metal bonding
Journal of Materials Science
Springer Science and Business Media LLC
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Terasaki, N., Sakaguchi, M., Chiba, H., Ohashi, T., Nagatomo, Y., Kuromitsu, Y., Sekino, T., & et al. (2022). Growth mechanism of TiN reaction layers produced on AlN via active metal bonding. Journal of Materials Science https://doi.org/10.1007/s10853-022-07472-6
Interfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN deposited on c-plane sapphire and a Ti–containing metal brazing or sintering layer using Ag–Cu–TiH2, Ag–TiH2 and Cu–TiH2 pastes have been investigated. The brazed/sintered samples were heated in vacuum at 850 °C for 30 min. The TiN layer produced at the metal/AlN interfaces consists of TiN particles < 50 nm in size and grain boundary phases including Al-containing Ag and Al-containing Cu. The Al concentration within the TiN layer decreases as the distance increases from the AlN epitaxial layer. These experimental observations all suggest that when AlN is used as a starting material in the active metal bonding method, interfacial reaction processes take place with the generation of a local Al-based eutectic liquid phase and elemental transport through this eutectic liquid phase.
My co-authors are all Japanse scientists employed either by Mitsubishi or by Osaka University.
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External DOI: https://doi.org/10.1007/s10853-022-07472-6
This record's URL: https://www.repository.cam.ac.uk/handle/1810/338832
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