Growth mechanism of TiN reaction layers produced on AlN via active metal bonding
View / Open Files
Authors
Sakaguchi, M
Chiba, H
Ohashi, T
Nagatomo, Y
Kuromitsu, Y
Sekino, T
Knowles, Kevin
Publication Date
2022-07Journal Title
Journal of Materials Science
ISSN
0022-2461
Publisher
Springer Science and Business Media LLC
Type
Article
This Version
AM
Metadata
Show full item recordCitation
Terasaki, N., Sakaguchi, M., Chiba, H., Ohashi, T., Nagatomo, Y., Kuromitsu, Y., Sekino, T., & et al. (2022). Growth mechanism of TiN reaction layers produced on AlN via active metal bonding. Journal of Materials Science https://doi.org/10.1007/s10853-022-07472-6
Abstract
Interfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN deposited on c-plane sapphire and a Ti–containing metal brazing or sintering layer using Ag–Cu–TiH2, Ag–TiH2 and Cu–TiH2 pastes have been investigated. The brazed/sintered samples were heated in vacuum at 850 °C for 30 min. The TiN layer produced at the metal/AlN interfaces consists of TiN particles < 50 nm in size and grain boundary phases including Al-containing Ag and Al-containing Cu. The Al concentration within the TiN layer decreases as the distance increases from the AlN epitaxial layer. These experimental observations all suggest that when AlN is used as a starting material in the active metal bonding method, interfacial reaction processes take place with the generation of a local Al-based eutectic liquid phase and elemental transport through this eutectic liquid phase.
Sponsorship
My co-authors are all Japanse scientists employed either by Mitsubishi or by Osaka University.
Embargo Lift Date
2023-07-18
Identifiers
External DOI: https://doi.org/10.1007/s10853-022-07472-6
This record's URL: https://www.repository.cam.ac.uk/handle/1810/338832
Statistics
Total file downloads (since January 2020). For more information on metrics see the
IRUS guide.