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dc.contributor.authorTerasaki, N
dc.contributor.authorSakaguchi, M
dc.contributor.authorChiba, H
dc.contributor.authorOhashi, T
dc.contributor.authorNagatomo, Y
dc.contributor.authorKuromitsu, Y
dc.contributor.authorSekino, T
dc.contributor.authorKnowles, KM
dc.date.accessioned2022-07-05T23:30:34Z
dc.date.available2022-07-05T23:30:34Z
dc.date.issued2022
dc.identifier.issn0022-2461
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/338832
dc.description.abstractInterfacial reactions related to the TiN layer growth process between nanocrystalline epitaxial layers of AlN deposited on c-plane sapphire and a Ti–containing metal brazing or sintering layer using Ag–Cu–TiH2, Ag–TiH2 and Cu–TiH2 pastes have been investigated. The brazed/sintered samples were heated in vacuum at 850 °C for 30 min. The TiN layer produced at the metal/AlN interfaces consists of TiN particles < 50 nm in size and grain boundary phases including Al-containing Ag and Al-containing Cu. The Al concentration within the TiN layer decreases as the distance increases from the AlN epitaxial layer. These experimental observations all suggest that when AlN is used as a starting material in the active metal bonding method, interfacial reaction processes take place with the generation of a local Al-based eutectic liquid phase and elemental transport through this eutectic liquid phase.
dc.description.sponsorshipMy co-authors are all Japanse scientists employed either by Mitsubishi or by Osaka University.
dc.publisherSpringer Science and Business Media LLC
dc.rightsAll Rights Reserved
dc.rights.urihttp://www.rioxx.net/licenses/all-rights-reserved
dc.titleGrowth mechanism of TiN reaction layers produced on AlN via active metal bonding
dc.typeArticle
dc.publisher.departmentDepartment of Materials Science And Metallurgy
dc.date.updated2022-07-04T15:41:54Z
prism.publicationNameJournal of Materials Science
dc.identifier.doi10.17863/CAM.86239
dcterms.dateAccepted2022-06-21
rioxxterms.versionofrecord10.1007/s10853-022-07472-6
rioxxterms.versionAM
dc.contributor.orcidTerasaki, N [0000-0002-0869-1155]
dc.identifier.eissn1573-4803
rioxxterms.typeJournal Article/Review
cam.issuedOnline2022-07-18
cam.orpheus.successWed Aug 03 09:46:03 BST 2022 - Embargo updated
cam.orpheus.counter1
cam.depositDate2022-07-04
pubs.licence-identifierapollo-deposit-licence-2-1
pubs.licence-display-nameApollo Repository Deposit Licence Agreement
rioxxterms.freetoread.startdate2023-07-18


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