Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

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Hoye, RLZ 
Muñoz-Rojas, D 
Nelson, SF 
Illiberi, A 
Poodt, P 

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

40 Engineering, 4016 Materials Engineering
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APL Materials
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AIP Publishing
European Research Council (247276)
European Commission (219332)
The authors acknowledge the support of the Rutherford Foundation of New Zealand and the Cambridge Commonwealth, European and International Trusts, and the ERC Advanced Investigator Grant, Novox, ERC-2009-adG247276. DMR acknowledges Marie Curie Actions (FP7/2007-2013, Grant Agreement Nos. 219332 and 631111), and the Ramon y Cajal 2011 programme from the Spanish MICINN and the European Social Fund, and the Comissionat per a Universitats I Recerca (CUR) del DIUE de la Generalitat de Catalunya, Spain.