Repository logo

Comparative study of polar and semipolar (1122) InGaN layers grown by metalorganic vapour phase epitaxy



Change log


Dinh, DV 
Oehler, F 
Zubialevich, VZ 
Kappers, MJ 
Alam, SN 


jats:pInGaN layers were grown simultaneously on (112¯2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (&lt;15%) of the (112¯2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112¯2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112¯2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112¯2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112¯2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.</jats:p>



Indium Gallium Nitride, MOVPE, Semipolar, Anisotropy, Photoluminescence

Journal Title

Journal of Applied Physics

Conference Name

Journal ISSN


Volume Title



AIP Publishing
Engineering and Physical Sciences Research Council (EP/I012591/1)
This work was nancially supported by the EU-FP7 ALIGHT project, under agreement no. FP7-280587. This work was also partially supported by the Programme for Research in Third Level Institutions (PRTLI) fourth and fth cycles. SNA acknowledges nancial support for his postgraduate fellowship from the Iranian Ministry of Science, Research and Technology. PJP acknowledges nancial support for his Professorship from Science Foundation Ireland.