Monolayer optical memory cells based on artificial trap-mediated charge storage and release.

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cam.issuedOnline2017-03-24
dc.contributor.authorLee, Juwon
dc.contributor.authorPak, Sangyeon
dc.contributor.authorLee, Young-Woo
dc.contributor.authorCho, Yuljae
dc.contributor.authorHong, John
dc.contributor.authorGiraud, Paul
dc.contributor.authorShin, Hyeon Suk
dc.contributor.authorMorris, Stephen M
dc.contributor.authorSohn, Jung Inn
dc.contributor.authorCha, SeungNam
dc.contributor.authorKim, Jong Min
dc.contributor.orcidPak, Sangyeon [0000-0003-1765-3043]
dc.contributor.orcidCho, Yuljae [0000-0003-2976-0604]
dc.contributor.orcidHong, John [0000-0002-1513-8622]
dc.contributor.orcidShin, Hyeon Suk [0000-0003-0495-7443]
dc.contributor.orcidSohn, Jung Inn [0000-0002-3155-4327]
dc.date.accessioned2018-12-14T00:31:20Z
dc.date.available2018-12-14T00:31:20Z
dc.date.issued2017-03-24
dc.description.abstractMonolayer transition metal dichalcogenides are considered to be promising candidates for flexible and transparent optoelectronics applications due to their direct bandgap and strong light-matter interactions. Although several monolayer-based photodetectors have been demonstrated, single-layered optical memory devices suitable for high-quality image sensing have received little attention. Here we report a concept for monolayer MoS2 optoelectronic memory devices using artificially-structured charge trap layers through the functionalization of the monolayer/dielectric interfaces, leading to localized electronic states that serve as a basis for electrically-induced charge trapping and optically-mediated charge release. Our devices exhibit excellent photo-responsive memory characteristics with a large linear dynamic range of ∼4,700 (73.4 dB) coupled with a low OFF-state current (<4 pA), and a long storage lifetime of over 104 s. In addition, the multi-level detection of up to 8 optical states is successfully demonstrated. These results represent a significant step toward the development of future monolayer optoelectronic memory devices.
dc.format.mediumElectronic
dc.identifier.doi10.17863/CAM.34224
dc.identifier.eissn2041-1723
dc.identifier.issn2041-1723
dc.identifier.urihttps://www.repository.cam.ac.uk/handle/1810/286915
dc.languageeng
dc.publisherSpringer Science and Business Media LLC
dc.publisher.urlhttp://dx.doi.org/10.1038/ncomms14734
dc.rightsAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subject0205 Optical Physics
dc.titleMonolayer optical memory cells based on artificial trap-mediated charge storage and release.
dc.typeArticle
dcterms.dateAccepted2017-01-26
prism.publicationDate2017
prism.publicationNameNat Commun
prism.startingPage14734
prism.volume8
pubs.funder-project-idEuropean Research Council (340538)
rioxxterms.licenseref.startdate2017-03-24
rioxxterms.licenseref.urihttp://www.rioxx.net/licenses/all-rights-reserved
rioxxterms.typeJournal Article/Review
rioxxterms.versionVoR
rioxxterms.versionofrecord10.1038/ncomms14734
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