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Calculation and design of GaAs quantum dot devices where the vibrational modes can be frozen out at cryogenic temperatures

Published version
Peer-reviewed

Repository DOI


Change log

Authors

Smith, CG 

Abstract

jats:titleAbstract</jats:title> jats:pWe calculate how the frequencies of the vibrational modes in a free-standing GaAs bar are changed as a function of the bar’s geometrical features such as length, thickness and shape. After understanding the effect of the physical characteristics we add finger gates that will be used to define quantum dots on the bar and study the system as a function of the length of the suspended finger gates, and their material properties. Finally, we strengthen the bridges in order that the first vibrational modes occur at a temperature of 100 mK or more, so that all modes can be frozen out when operated in a dilution refrigerator.</jats:p>

Description

Acknowledgements: The authors would like to acknowledge financial support from EPSRC on the project ‘Non-Ergodic Quantum Manipulation’ referenced as EP/R029075/1. The authors would like to thank Dr C Chen for growing the wafer structure shown in the supplementary information. G S set up the models, performed the simulations, analysed the data from these, fabricated the actual devices and recorded the SEM images. G S and C G S wrote the manuscript.

Keywords

5108 Quantum Physics, 51 Physical Sciences

Journal Title

Semiconductor Science and Technology

Conference Name

Journal ISSN

0268-1242
1361-6641

Volume Title

39

Publisher

IOP Publishing
Sponsorship
Engineering and Physical Sciences Research Council (EP/R029075/1)