Validated physical models and parameters of bulk 3C-SiC aiming for credible technology computer aided design (TCAD) simulation
Accepted version
Peer-reviewed
Repository URI
Repository DOI
Change log
Authors
Arvanitopoulos, A
Gyftakis, KN
Perkins, S
Antoniou, M
Description
Keywords
wide bandgap, silicon carbide, technology computer aided design (TCAD)
Journal Title
Semiconductor Science and Technology
Conference Name
Journal ISSN
0268-1242
1361-6641
1361-6641
Volume Title
32
Publisher
IOP Publishing