Research data supporting "MOVPE studies of zincblende GaN on 3C-SiC/Si (001)"
The MOVPE growth of two different sample series has been studied. In Sample Series A the epilayer growth temperature was varied at a constant V/III-ratio of 76 and a reactor pressure of 300 Torr. In Sample Series B the V-to-III ratio during the epilayer growth was varied at a constant temperature and a pressure of 300 Torr.
For each sample series, a separate Text Document (.txt file) with the following information has been deposited:
- AFM data: RMS roughness
- AFM data: Feature size parallel and perpendicular to the miscut direction
- XRD phase analysis
- XRD w-Rocking curves FWHM
A detailed description on how these data were collected is given in the associated research article.
Software / Usage instructions
Engineering and Physical Sciences Research Council (EP/M010589/1)
Technology Strategy Board (TS/N003756/1 - 132135)