Band alignment calculation of dielectric films on VO<inf>2</inf>

Zhang, Z; Chen, J; Guo, Y; Robertson, J

doi:10.17863/CAM.48406

Band alignment calculation of dielectric films on VO2

Accepted version

Peer-reviewed

Repository URI

https://www.repository.cam.ac.uk/handle/1810/301325

Repository DOI

https://doi.org/10.17863/CAM.48406

Files

Accepted version (1.02 MB)

Type

Article

Authors

Zhang, Z

https://orcid.org/0000-0002-1406-1256

Chen, J

Guo, Y

https://orcid.org/0000-0003-2656-0340

Robertson, J

Keywords

Vanadium dioxide, Band alignment, Metal-insulator transition FET, Density functional calculation

Journal Title

Microelectronic Engineering

Journal ISSN

0167-9317
1873-5568

Volume Title

216

Publisher

Elsevier BV

Publisher DOI

https://doi.org/10.1016/j.mee.2019.111057

Rights

Attribution-NonCommercial-NoDerivatives 4.0 International

Sponsorship

European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (737109)

Collections

University of Cambridge Research Outputs (Articles and Conferences)