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On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain.


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Authors

Goykhman, Ilya 
Sassi, Ugo 
Desiatov, Boris 
Mazurski, Noa 
Milana, Silvia 

Abstract

We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.

Description

Keywords

Graphene, avalanche multiplication, photodetectors, silicon photonics

Journal Title

Nano Lett

Conference Name

Journal ISSN

1530-6984
1530-6992

Volume Title

16

Publisher

American Chemical Society (ACS)
Sponsorship
Engineering and Physical Sciences Research Council (EP/K017144/1)
Engineering and Physical Sciences Research Council (EP/K01711X/1)
Engineering and Physical Sciences Research Council (EP/M507799/1)
European Research Council (319277)
European Commission (604391)
European Commission Horizon 2020 (H2020) Future and Emerging Technologies (FET) (696656)
EPSRC (1354817)
Engineering and Physical Sciences Research Council (EP/L016087/1)
We acknowledge funding from EU Graphene Flagship (No. 604391), ERC Grant Hetero2D, and EPSRC Grant Nos. EP/ K01711X/1, EP/K017144/1, EP/N010345/1, EP/M507799/ 1, and EP/L016087/1.