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Advances in Dielectric Thin Films for Energy Storage Applications, Revealing the Promise of Group IV Binary Oxides

Accepted version
Peer-reviewed

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Type

Article

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Authors

Pan, H 
Macmanus-Driscoll, JL  ORCID logo  https://orcid.org/0000-0003-4987-6620
Pereira, M 

Abstract

Among currently available energy storage (ES) devices, dielectric capacitors are optimal systems owing to their highest power density, high operating voltages, and long lifetime. Standard, high-performance ferroelectric-based ES compositions are formed of complex-composition perovskites, and require precision, high temperature thin film fabrication. The discovery of ferroelectricity in doped HfO2 in 2011 at the nanoscale was potentially game-changing for many modern technologies such as field effect transistors, non-volatile memory, and ferroelectric tunnel junctions. This is because HfO2 is a well-established material in the semiconductor industry where it is used as a gate dielectric. On the other hand, (pseudo-)binary HfO2 and ZrO2-based materials have received much less attention for ES capacitors, even though antiferroelectric HfO2 and ZrO2-based thin films show strong promise. This focus review summarizes the current status of conventional polymer and perovskite ferroic-based energy storage. It then discusses recent developments in, and proposes new directions for, antiferroelectric and ferroelectric group IV oxides, namely HfO2 and ZrO2-based thin films.

Description

Keywords

40 Engineering, 3403 Macromolecular and Materials Chemistry, 4016 Materials Engineering, 34 Chemical Sciences, 7 Affordable and Clean Energy

Journal Title

ACS Energy Letters

Conference Name

Journal ISSN

2380-8195
2380-8195

Volume Title

6

Publisher

American Chemical Society (ACS)

Rights

All rights reserved
Sponsorship
Royal Academy of Engineering (RAEng) (CiET1819\24)
Engineering and Physical Sciences Research Council (EP/P007767/1)
European Commission Horizon 2020 (H2020) ERC (882929)
royal academy of engineering