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Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.

Published version
Peer-reviewed

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Type

Article

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Authors

Jönsson, Adam 
Svensson, Johannes 
Fiordaliso, Elisabetta Maria 
Lind, Erik 
Hellenbrand, Markus  ORCID logo  https://orcid.org/0000-0002-5811-5228

Abstract

Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length L g of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage V T shift (∼100 mV). The method is further validated using the well-established technique of electron holography to verify the presence of the doping profile. Combined, device and material characterizations allow us to in-depth study the origin of the threshold voltage variability typically present for metal organic chemical vapor deposition (MOCVD)-grown III-V nanowire devices.

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Keywords

III-V, doping, electron holography, MOSFET, nanowire, InAs, VLS growth

Journal Title

ACS Appl Electron Mater

Conference Name

Journal ISSN

2637-6113
2637-6113

Volume Title

3

Publisher

American Chemical Society (ACS)